| PART |
Description |
Maker |
| FMA3011 |
12.7-16GHZ MMIC POWER AMPLIFIER
|
Filtronic Compound Semiconductors
|
| HMC478SC70 |
SiGe HBT GAIN BLOCK MMIC AMPLIFIE /DC - 4 GHz
|
Hittite Microwave Corporation
|
| CHA5051 |
7-16GHz Medium Power Amplifier
|
United Monolithic Semiconductors
|
| CHR3662-QDG |
7-16GHz Integrated Down Converter GaAs Monolithic Microwave IC in SMD package
|
United Monolithic Semiconductors
|
| Q62702-G44 CGY120 CGY120E6763 |
From old datasheet system
GaAs MMIC (Monolithic microwave IC MMIC-Amplifier for mobile communication)
MMIC-Amplifier for GSM/PCN
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| HMC-APH478 H478 |
18000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 18 - 20 GHz
GaAs HEMT MMIC POWER AMPLIFIER
|
Hittite Microwave Corporation
|
| XP1022-QF-0N00 XP1022-QF-EV1 |
17.0-25.0 GHz GaAs MMIC Power Amplifier, QFN 17000 MHz - 25000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
17.0-25.0 GHz GaAs MMIC Power Amplifier, QFN 17.0-25.0千兆赫的GaAs MMIC功率放大器，QFN封装
|
Mimix Broadband, Inc.
|
| CHA6042-99F_00 CHA6042 CHA6042-99F/00 |
Circular Connector; No. of Contacts:23; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:16; Circular Contact Gender:Pin; Circular Shell Style:Cable Receptacle; Insert Arrangement:16-23
13-16GHz High Power Amplifier
|
UMS[United Monolithic Semiconductors]
|
| 2SC5316 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications (fT=16GHz Series)
|
TOSHIBA
|
| 2SC5317FT |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications (CHIP: fT=16GHz series)
|
TOSHIBA
|
